View 2SD1409_4684562.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

savantic semiconductor product specification silicon npn power transistors 2SD1409 d escription with to-220fa package high dc current gain darlington applications igniter applications high volitage switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 600 v v ceo collector -emitter voltage open base 400 v v ebo emitter-base voltage open collector 5 v i c collector current 6 a i b base current 1 a t c =25 25 p c collector power dissipation t a =25 2.0 w t j junction temperature 150 t stg storage temperature -55~150 1
savantic semiconductor product specification 2 silicon npn power transistors 2SD1409 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma; i b =0 400 v v cesat collector-emitter saturation voltage i c =4a ;i b =0.04a 2.0 v v besat base-emitter saturation voltage i c =4a ;i b =0.04a 2.5 v v ecf emitter-collector diode forward voltage i e =4a; i b =0 3.0 v i cbo collector cut-off current v cb =600v; i e =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 3 ma h fe-1 dc current gain i c =2a ; v ce =2v 600 h fe-2 dc current gain i c =4a ; v ce =2v 100 c ob collector output capacitance f=1mhz ; v cb =50v;i e =0 35 pf switching times t on turn-on time 1 s t stg storage time 8 s t f fall time i b1 =-i b2 =0.04a v cc =100v ,r l =25 @ 5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1409 package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm)

▲Up To Search▲

Price & Availability of 2SD1409

	To Download 2SD1409 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .